? 2003 ixys all rights reserved v ces = 600 v i c25 = 75 a v ce(sat) = 2.5 v t fi typ = 35 ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c50 a v ge = 0 v t j = 150 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 50 a, v ge = 15 v t j = 25 c 2.1 2.5 v t j = 125 c 1.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c60a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ 600v p c t c = 25 c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque (to-247) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g ds99043a(09/03) g = gate, c = collector, e = emitter, tab = collector features z very high frequency igbt z square rbsoa z high current handling capability z mos gate turn-on - drive simplicity applications z pfc circuits z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies z ac motor speed control z dc servo and robot drives z dc choppers advantages z high power density z very fast switching speeds for high frequency applications hiperfast tm igbt ixgh 60n60c2 ixgt 60n60c2 advance technical data to-268 (ixgt) c (tab) c (tab) g c e to-247 ad (ixgh) e g c2-class high speed igbts
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 60n60c2 ixgt 60n60c2 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50 a; v ce = 10 v, 40 58 s pulse test, t 300 s, duty cycle 2 % c ies 3900 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 280 pf c res 97 pf q g 146 nc q ge i c = 50 a, v ge = 15 v, v ce = 0.5 v ces 28 nc q gc 50 nc t d(on) 18 ns t ri 25 ns t d(off) 95 150 ns t fi 35 ns e off 0.48 0.8 mj t d(on) 18 ns t ri 25 ns e on 0.45 mj t d(off) 130 ns t fi 80 ns e off 1.2 mj r thjc 0.26 k/w r thck (to-247) 0.25 k/w inductive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = r off = 2 ? inductive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 400 v, r g = r off = 2 ? to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-268 outline min. recommended footprint (dimensions in inches and mm)
? 2003 ixys all rights reserved ixgh 60n60c2 ixgt 60n60c2 fig. 2. extended output characteristics @ 25 deg. c 0 25 50 75 10 0 12 5 15 0 17 5 200 11 .5 22.533.544.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 9v 5v 7v fig. 3. output characteristics @ 125 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.511.522.533.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 5v 7v 9v fig. 1. output characteristics @ 25 deg. c 0 10 20 30 40 50 60 70 80 90 10 0 0.511.522.533.5 v ce - volts i c - amperes v g e = 1 5v 1 3v 1 1v 7v 5v 9v fig. 6. input admittance 0 25 50 75 10 0 12 5 15 0 17 5 200 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 v ge - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.5 0.6 0.7 0.8 0.9 1 1. 1 1. 2 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalize d i c = 1 00a i c = 50a i c = 25a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 1. 5 2 2.5 3 3.5 4 4.5 5 5 6 7 8 9101112131415 v ge - volts v ce - volts t j = 25 o c i c = 1 00a 50a 25a
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 60n60c2 ixgt 60n60c2 ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 fig. 12. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - pf c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 20406080100120140160 q g - nanocoulombs v g e - volts v c e = 300v i c = 50a i g = 1 0ma fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 10 0 0 255075100125150175200 i c - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 8. dependence of e off on r g 0 1 2 3 4 5 6 24681 01 21 41 6 r g - ohms e off - millijoules i c = 75a i c = 25a t j = 1 25 o c v ge = 1 5v v ce = 400v i c = 50a i c = 1 00a fig. 9. dependence of e off on i c 0 1 2 3 4 5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules r g = 2 ohms r g = 1 0 ohms - - - - - t j = 1 25 o c v g e = 1 5v v c e = 400v t j = 25 o c fig. 10. dependence of e off on temperature 0 1 2 3 4 5 25 50 75 100 125 t j - degrees centigrade e off - millijoules i c = 1 00a i c = 50a i c = 25a v g e = 1 5v v c e = 400v r g = 2 ohms r g = 1 0 ohms - - - - - i c = 75a
? 2003 ixys all rights reserved ixgh 60n60c2 ixgt 60n60c2 fig. 13. maximum transient thermal resistance 0.05 0.1 0.15 0.2 0.25 0.3 1 10 100 1000 puls e w idth - millis e c ond s r (th) j c - (oc/w)
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